Some Observations of the Effects of Microplasma Switching on the Reverse Characteristics of a Silicon p-n Junction†

The negative resistance characteristics of the p-n junction are explained on the basis of the intermittent operation of microplasma. It is not essential to know the exact form of the microplasma characteristic and the amplest has been assumed. An equivalent circuit for a microplasma is postulated and the calculated slope for the random voltage pulses is in good agreement with that obtained experimentally. The effect of temperature on the reverse characteristic is studied from -196°C to 130°C, showing the reverse voltage to hove a positive temperature coefficient, consistent with avalanche breakdown. As the temperature is decreased, the negative regions tend to become larger, and in some cases others appear which were not observable at room temperature.