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An accumulation layer n-channel MOSFET that operates at 4 K has been fabricated. Sharp hysteretic current kinks in the I–V characteristic are observed, where the transistor switches discontinuously between two well defined states. The kinks are modelled in terms of changes in the device potential configuration due to holes generated by avalanche breakdown in the high electric field region near pinch off. Noise measurements which elucidate the physical mechanisms causing the current kinks are presented.
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Ghosh et al. (1990) studied this question.
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