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April 1, 1996Applied Physics Letters

Nondestructive measurement of interfacial SiO2 films formed during deposition and annealing of Ta2O5

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RDR. A. B. DevineUniversity of Geneva

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R. A. B. Devine (1996) studied this question.

synapsesocial.com/papers/6a6fcb5326770c2b8de02bd8 https://doi.org/10.1063/1.115627

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