We calculate electron tunneling for an Al 2 O 3 /NiAl(110) structure in scanning tunneling microscopy (STM) by employing a simple and exactly solvable one-dimensional model. The calculation reproduces the essential features of the apparent height of an Al 2 O 3 thin film vs. sample bias curve for an Al 2 O 3 (0.5 nm)/NiAl(110) structure studied by Hansen et al. [Surf. Sci. 475 (2001) 96] for the appropriate electron affinity of the Al 2 O 3 film, about 1.35 eV. Origins of fine structures found in the calculated transmission probability vs. sample bias curves are discussed.
No takes yet. Share an insight, caveat, or question.
Iwasaki et al. (2002) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: