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We report on inelastic light scattering on self-assembled In(Ga)As/GaAs quantum dots. Phonon modes are investigated in backscattering from (001) surface and (110) cleaved edge both in polarized and depolarized geometry. One relatively broad phonon signal is observed which is attributed to optical phonon modes in and around the In(Ga)As quantum dots. The Raman selection rules are similar to the bulk material. Additionally, a broad peak is observed around 50 meV under resonance conditions which is attributed to electronic interlevel transitions in the n-doped In(Ga)As quantum dots.
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Chu et al. (2000) studied this question.
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