By introducing a 2-nm-Al0.3Ga0.7As capping layer on the InAs quantum dots, a transverse-electric- (TE) field-enhanced multicolor quantum-dot (QD) infrared photodetector has been achieved. The TE-enhanced peaks are due to the transition from the S-like ground state to the P-like first excited states induced by the strain field effects on the quantum dot. After rapid thermal annealing, the TE dominant peaks can be changed to transverse-magnetic- (TM) field-enhanced and vice versa. This is because the rapid thermal annealing creates defects at the boundary of QDs and their surrounding material, which release the compressive strain within the QDs.
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Chen et al. (2005) studied this question.
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