Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1−xAs strain-relieving quantum wells

We report on tailoring detection bands of InAs quantum-dot infrared photodetectors (QDIPs) using InxGa1−xAs strain-relieving capping layers that also act as quantum wells (QWs). QDIPs with InAs QDs capped by a 20 ML In0.15Ga0.85As QW show a sharp photoresponse at ∼9 μm, while the counterpart QDIPs without QWs show broad photoresponse in the 5–7 μm range. The excited states involved in the intraband transitions in QDIPs with the In0.15Ga0.85As QW appear to be coupled QD and QW electron excited states.