We report the effects of In0.33Ga0.67As capping layers on the structural and optical properties of InAs self-organized quantum dots grown by gas-source molecular-beam epitaxy. With different deposition methods for the InGaAs capping layer, the quantum-dot density can be adjusted from 2.3×1010 to 1.7×1011 cm−2. As-cleaved 3.98-mm-long diode laser using triple stacks of InAs quantum dots with the capping layer grown by GaAs/InAs sequential binary growth demonstrates an emission wavelength of 1305 nm and a threshold current density of 360 A/cm2. A ground-state saturation gain of 16.6 cm−1 is achieved due to the high dot density.
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Chang et al. (2003) studied this question.
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