Low-concentration diffusion of Zn into GaAs has been performed using a closed-tube two-temperature method whereby the ZnAs2 diffusion source and the GaAs wafer are placed in the low and the high temperature zones, respectively. Surface hole concentration decreases as the wafer temperature rises, mostly due to the temperature dependence on the equilibrium constant for the reaction which Zn incorporates into the Ga site. The junction depth is heavily dependent on the source temperature. Highly efficient LED is obtained by a two-temperature diffusion method.
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Hasegawa et al. (1980) studied this question.
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