Significance Solution-processing metal oxide (MO) films at low temperature enables their integration in mechanically flexible and inexpensive substrates for unconventional optoelectronics. However, temperature reduction has not been accompanied by a corresponding reduction in film-processing time, which remains far greater than acceptable for efficient/continuous additive manufacturing as in typical fabrication lines. Here, we report a highly efficient cofuel-assisted combustion process, which involves introducing both a fluorinated fuel and a preannealing step, that achieves ultrafast reaction and metal–oxygen–metal (M-O-M) lattice condensation within 10–60 s for several MO semiconductors and aluminum oxide dielectric. The resulting MO transistors exhibit high carrier mobility, excellent bias stability, and good flexibility.
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Wang et al. (2019) studied this question.
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