Recently interest has been expressed in superlattice avalanche photodiodes (SAPDs) in which the initiating carrier can impact more than one ionisation per stage, as a further step towards the solid-state photomultiplier. This letter indicates that these advanced SAPDs are likely to offer improved receiver sensitivity, compared with normal SAPDs, only if the residual hole ionisation is kept to an extremely low value.
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Fyath et al. (1988) studied this question.