Understanding electron-correlation effects on the current-voltage characteristics of spintronic devices remains largely limited to simplified models. To advance beyond this, the authors present a computational framework combining density functional theory, nonequilibrium Green's functions, and dynamical mean-field theory for quantum transport, introducing efficient approximations for finite-bias calculations. Applied to an Fe/MgO/Fe magnetic tunnel junction, the results reveal that bias-driven inelastic electron-electron scattering can sharply increase electrical current and impact tunnel magnetoresistance, providing guidance relevant for experiments.
No takes yet. Share an insight, caveat, or question.
Nell et al. (2025) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: