A two terminal spin-injection device is fabricated using a nanostencil process with a Co–Cu–Co stack. The stack can be deposited both by sputtering and by electron-beam evaporation. A better edge definition is observed in evaporation-deposited films under cross section transmission electron microscopy. Both methods succeeded in producing junctions with sub-100 nm lateral dimensions and show spin-injection-induced magnetic switching.
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Sun et al. (2003) studied this question.
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