Answers are grounded in this paper and cite their sources.
Pt Schottky diodes were formed on single ZnO nanowires grown by site-selective molecular-beam epitaxy and then transferred to SiO2-coated Si substrates. The diodes exhibit excellent ideality factors of 1.1 at 25 °C and very low (1.5×10−10A, equivalent to 2.35Acm−2, at −10V) reverse currents. The nanowire diodes show a strong photoresponse, with the current–voltage characteristics becoming ohmic under ultraviolet illumination (366 nm light). The on-off current ratio of the diodes at 0.15∕−5V was ∼6. These results show the ability to manipulate the electron transport in nanoscale ZnO devices.
No takes yet. Share an insight, caveat, or question.
Heo et al. (2004) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: