The growth and fabrication of a InGaAs/InP junction field-effect transistor using metal organic vapor phase epitaxy is reported for the first time. Very high extrinsic transconductance has been achieved (210 mS/mm for a gate length of 1.5 µm), by the use of a p-InP buffer layer which allows close to maximum electron velocity in the channel, and by using a self-alignment technique to give very low values of access resistance, typically 0.5 Ω.mm.
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Wake et al. (1985) studied this question.