Flexible resistive switching bistable memory devices using ZnO nanoparticles embedded in polyvinyl alcohol (PVA) matrix and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)

experimental results by analyzing the effect of space charge and electronic structure. Interestingly, the device performance was not degraded and remains identical even after bending the device from 60-120° angles, which indicates high potential for flexible non-volatile bistable memory device applications. This demonstration provides a class of memory devices with the potential for future flexible electronics applications.