⌘+K

Pulse Explore Clubs Researchers Journals

Home Clubs Explore

January 1, 2017RSC AdvancesOpen Access

Reproducible and reliable resistive switching behaviors of AlO X /HfO X bilayer structures with Al electrode by atomic layer deposition

Masoud Akbari Min‐Kyu Kim Dongshin Kim Jang‐Sik Lee

View Full Paper

Ask AI

Bookmark

Share

Abstract

The resistive switching behaviors of AlO X /HfO X bilayer structures were investigated.

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Akbari et al. (2017) studied this question.

synapsesocial.com/papers/6a7014e7e5469ee92be0d9dd https://doi.org/10.1039/c6ra26872b

View Full Paper

Ask AI

Bookmark

Share

Keep reading

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and ChallengesReview · 2009 · 5,082 citations
2Metal–Oxide RRAMReview · 2012 · 2,759 citations
3Amorphous ZnO based resistive random access memoryOriginal Research · 2016 · 143 citations
4Design of Electrodeposited Bilayer Structures for Reliable Resistive Switching with Self-ComplianceOriginal Research · 2016 · 26 citations
5Flexible resistive switching memory with a Ni/CuO x /Ni structure using an electrochemical deposition processOriginal Research · 2016 · 47 citations