Injected carriers were found to reduce the dielectric constant of the active layer by the unexpectedly high value of 0.4. This is a factor of approximately four greater than measured for GaAs/(Ga, Al)As lasers and also higher than other reported values for (In,Ga)(As,P) lasers operating at a wavelength of 1.6 μm. The technique employed was the observation of the spectral shift of individual Fabry-Perot modes of oxide insulated stripe lasers down to very low currents below threshold.
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S.E.H. Turley (1982) studied this question.