Threshold current densities as low as 2.13 kA cm−2 have been achieved in broad-contact double-heterostructure lasers with an emission wavelength of 1.55 μm. The three-layer structure was grown by liquid-phase epitaxy and contained a quaternary active layer 0.6 μm thick and a p-type quaternary upper confining layer with a bandgap of 1.05 eV. The normalised threshold current density was 3.5 kA cm−2 μm−1.
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Henshall et al. (1979) studied this question.