The electrical properties of TiSe 2 single crystals doped with several impurities have been investigated as a function of the concentration. The electrical resistivity at low temperature is distinctly affected by Nb, Cr and Ni in connection with a localisation of carriers and of complex scattering mechanisms. Crystals of the Ti 1-x Nb x Se 2 system have been grown for the whole range of concentration x. They present properties typical for the 1T and 2H phases. Substituted impurities like Sc and Y appear to behave as acceptors and impurities like Re or Cu as donors.
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F. Lévy (1980) studied this question.
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