Hot-electron memory effect in double-layered heterostructures

We studied a memory effect due to the real-space hot-electron transfer between two conducting GaAs layers separated by a graded AlGaAs barrier. Application of a lateral electric field to one of the layers enhances its electron temperature and leads to a charge injection into the other layer which is kept floating. As the heating voltage is removed, the injected electrons remain in the second layer, giving rise (at low temperatures, 77 K) to a persistent potential difference. Kinetics of the charge-up process are studied at different heating voltages.