We analyze the internal quantum efficiency (IQE) of whole-composition-range AlGaN multiquantum wells (MQWs) on AlGaN with various dislocation densities (DDs) by excitation-density-dependent photoluminescence measurement. IQEs of deep ultraviolet/ultraviolet (DUV/UV) MQWs are strongly dependent on the DD. IQE with an excess carrier density of 1 × 10 18 cm -3 changes from 4 to 64% when the DD changes from 6 × 10 9 to 2 × 10 8 cm -2 . This trend is almost the same for DUV/UV MQWs with emission wavelength ranging from 230 to 350 nm. Thus, the reduction of the DD is very important for the realization of a high-IQE DUV/UV active layer.
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Ban et al. (2011) studied this question.
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