We have fabricated low threading dislocation density (TDD) AlN templates on sapphire substrates for application to deep‐ultraviolet (DUV) light‐emitting diodes (LEDs) by employing an epitaxial lateral overgrowth (ELO) process. An AlN stripe structure with a width of 5 μm and a spacing of 3 μm was formed by using inductive coupled plasma (ICP) etching. The AlN stripes were completely coalesced and embedded to create a flat surface after the growth of an approximately 15 μm‐thick ELO‐AlN layer, grown by low‐pressure metal‐organic chemical vapor deposition (LP‐MOCVD). We systematically investigated the appropriate V/III ratio and growth temperature for the ELO‐AlN. The edge‐type TDD of the AlN was reduced from 2×10 9 cm –2 (AlN stripe region) to 3×10 8 cm –2 (in the wing region of the ELO‐AlN), as estimated by cross‐sectional transmission electron microscope (TEM) imaging. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Hirayama et al. (2009) studied this question.