Room temperature magnetoelectric control of micromagnetic structure in iron garnet films

The effect of magnetic domain wall motion induced by electric field is observed in epitaxial iron garnet films grown on (210) and (110) gadolinium-gallium garnet substrates. The displacement of the domain wall changes to the opposite at the reversal of electric field polarity, and it is independent of the magnetic polarity of the domains. Dynamic observation of the domain wall motion in 400 V electric pulses gives the domain wall velocity of about 50 m/s. The same velocity is achieved in a magnetic field pulse of about 50 Oe. This type of magnetoelectric effect is implemented in single phase material at room temperature.