Domain-Wall p-n Junction in Lithium Niobate Thin Film on an Insulator

Domain-wall nanoelectronics has attracted extensive attention since the discovery of conductive domain walls, where domain-wall p-n junctions are indispensable for device applications. Here, we report on the fabrication of a domain-wall p-n junction based on n-type and p-type conductive domain walls in an x-cut lithium niobate thin film on an insulator using a lateral-electric-field poling technique. The electron and hole mobilities in the n-type and p-type domain walls are measured to be 337 and 930.2em0excm²0.1em0exV^-10.1em0exs^-1, respectively, more than 400 times higher than those in the parent bulk crystal. The successful fabrication of a domain-wall p-n junction with large electron and hole mobilities in the domain walls makes lithium niobate on an insulator a promising platform for domain-wall nanoelectronics and optoelectronics.