The femtosecond-time-resolved response of the spectral dielectric function provides a great wealth of information on carrier and lattice dynamics in highly photoexcited semiconductors. We present measurements of the dielectric function of crystalline and amorphous GaAs over a broad spectral energy range (1.7--3.4 eV), with sub-100-fs time resolution. A detailed analysis of the data reveals many insights into the dynamics and phase changes in semiconductors at high excitation fluences up to and beyond the damage threshold.
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Kim et al. (2002) studied this question.
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