Hole spin relaxation dynamics in CdTe/CdSe core-shell nanocrystals are measured by an ultrafast polarization transient grating technique. Photoexcited charge separation in type II structures suppresses the electron-hole exchange interaction and the hole spin relaxation time constant is found to increase from ~0.3 ps to ~10 ps at 293 K as the CdSe shell thickness increases from ~0.2 nm to ~2.4 nm. Analysis of these data suggests that spin relaxation in semiconductor nanostructures is tunable between type I and type II localization according to an electron-hole overlap function.
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He et al. (2010) studied this question.
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