We report a bistable resistance switching effect in amorphous InGaZnO (a-IGZO) thin films deposited by a pulsed laser deposition method. The electrical properties of a-IGZO thin films were controlled by the oxygen partial pressure during deposition and this determined the resistance switching effect. We also observed the resistance switching effect with various electrodes such as Pt, Au, and Al. We suggest that the resistance switching effect is related to the formation of a conducting path by metal and/or oxygen vacancy defects in the a-IGZO matrix.
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Kim et al. (2010) studied this question.
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