Wideband near-infrared emission from GaScO₃:Cr³⁺ phosphors with a perovskite structure

Cr 3+ -activated phosphors have attracted significant attention for their tunable emission, spanning narrow-band red to broadband near-infrared (NIR) luminescence, depending on the crystal field environment. Here, we report the realization of wideband NIR emission in Cr 3+ -doped GaScO 3 (GaScO 3 :Cr 3+ ) phosphors with perovskite structure. The phosphors were synthesized by traditional solid-state reaction method. The first-principles calculations were conducted and the results demonstrate that the octahedral [GaO 6 ] sites exhibit relatively weak crystal field strength ( Dq / B ≈ 2.2), facilitating efficient spin-allowed transitions of Cr 3+ from the 4 T 2 state to the 4 A 2 state. The photoluminescence spectroscopy revealed an exceptionally broad NIR emission band from a range of 700 nm–1200 nm with full width at half maximum (FWHM) of 145 nm under 465-nm excitation. Overall, these results highlight the viability of GaScO 3 :Cr 3+ as a highly promising material for wideband NIR applications.