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Light-emitting devices based on MgxZn1-xO/ZnO:RE/Si heterostructures are proposed. Hot holes formed in MgxZn1-xO layers enter into ZnO:RE layers to impact-excite the RE3+ ions therein. From the devices using ZnO:RE (Eu, Er and Tm) films, electroluminescence in red, green, blue, and also optical-communication wavelengths are achieved. Such RE-related electroluminescence can be activated by extraordinarily low voltages of only several volts.
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Yang et al. (2014) studied this question.
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