Potential‐pH diagrams are presented for the systems and . It is shown that the stability field of elemental silicon lies well below the water stability region, indicating that silicon is highly unstable in water relative to oxidation to Si(IV). Thus, the ability to suppress oxide formation must be attributed to kinetic effects. It is shown further that the introduction of HF and into the aqueous phase results in a partial displacement by of the and stability fields originally present in the system. Under some conditions, the stability domain is nested between two stability fields. It is suggested that the minimal etching rates observed at relatively low and relatively high pH solutions of HF may be related in part to the presence of the solubility walls in both pH regimes.
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Osseo‐Asare et al. (1996) studied this question.