Uniform zinc gallate (ZnGa 2 O 4 ) nanowires are successfully synthesized by a one-step simple thermal evaporation of a mixture of ZnO and Ga 2 O 3 powders under controlled conditions. Its morphology and microstructures were determined by X-ray powder diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, and photoluminescence spectroscopy. The observations reveal that the as-synthesized ZnGa 2 O 4 nanowires are single-crystalline with a cubic spinel structure, usually several tens of microns in length. The typical diameters of ZnGa 2 O 4 nanowires range from 100 to 200 nm. The room-temperature photoluminescence spectrum of ZnGa 2 O 4 nanowires features four luminescence peaks around 400, 503, and 686 nm, which are attributed to self-activation center of the octahedral Ga−O, electronic transitions of localized Ga 3+ ion in the octahedral Ga−O, and single oxygen vacancies ( V O *), respectively. A self-assembled Ga catalytic vapor−liquid−solid (VLS) formation mechanism is also proposed to interpret the growth of ZnGa 2 O 4 nanowires in our work.
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Xu et al. (2007) studied this question.
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