Importance of Reducing Vapor Atmosphere in the Fabrication of Tin-Based Perovskite Solar Cells

Tin-based halide perovskite materials have been successfully employed in lead-free perovskite solar cells, but the tendency of these materials to form leakage pathways from p-type defect states, mainly Sn 4+ and Sn vacancies, causes poor device reproducibility and limits the overall power conversion efficiencies (PCEs). Here, we present an effective process that involves a reducing vapor atmosphere during the preparation of Sn-based halide perovskite solar cells to solve this problem, using MASnI 3, CsSnI 3, and CsSnBr 3 as the representative absorbers. This process enables the fabrication of remarkably improved solar cells with PCEs of 3.89%, 1.83%, and 3.04% for MASnI 3, CsSnI 3, and CsSnBr 3, respectively. The reducing vapor atmosphere process results in more than 20% reduction of Sn 4+ /Sn 2+ ratios, which leads to greatly suppressed carrier recombination, to a level comparable to their lead-based counterparts. These results mark an important step toward a deeper understanding of the intrinsic Sn-based halide perovskite materials, paving the way to the realization of low-cost and lead-free Sn-based halide perovskite solar cells.