Resonant tunneling in the fractional quantum Hall regime

The resonant tunneling through an impurity level between the edges of a Hall bar is studied based on the theory of edge excitations. We find that the peak tunneling current scales with the potential difference between the edges VR-VL=2{Δ} as Iₜ{~}Δ^g-1 at low temperatures (T{}e*{Δ}/2) and as Iₜ{~}{Δ}T^g-2 at high temperatures (T{}e*{Δ}/2), with the exponent g being intimately related to the propagator of the charge carriers. These results can be used to experimentally probe internal structures of the fractional quantum Hall states by measuring g.