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We have calculated the dielectric response matrix ε_→G,→G^'(→q=0, ω) for silicon and have obtained the macroscopic frequency-dependent dielectric function. Contrary to recent calculations, local-field corrections do not shift the prominent peak positions of the imaginary part of the dielectric function; further the calculated dielectric function is improved as compared with experiments at higher energies. In particular, agreement with measured energy-loss spectra is significantly better when local-field effects are included.
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Louie et al. (1975) studied this question.
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