Impact of Trap Centers on the Scintillation Performance of TlSr2Br5:Eu2+ Single Crystal

In this research we present the scintillation characteristics of Eu 2+ -doped TlSr 2 Br 5 single crystals for radiation detection applications. These scintillators were grown from the melt using the Bridgman method. A comprehensive set of characterization techniques was employed to evaluate the performance of this scintillator, including X-ray excited luminescence, photoluminescence, thermoluminescence, scintillation light yield, energy resolution, and decay time measurements. A comparison between Eu 2+ -doped and undoped TlSr 2 Br 5 crystals revealed no significant improvement in light yield, energy resolution, and decay characteristics upon doping. Thermoluminescence analysis confirmed the presence of intermediate and deep trap centers in pure and Eu 2+ -doped samples. These trap centers likely act as carrier trapping sites, delaying radiative recombination and thereby limiting scintillation efficiency. This study also highlights the critical role of trap centers in governing the scintillation performance of this material. Improvement in the scintillation performance of this material could be achieved through appropriate defect engineering strategies.