Absolute rate constants for the reactions of O(³P) atoms and OH radicals with SiH₄ over the temperature range of 297–438°K

Absolute rate constants for the reaction of SiH 4 with O( 3 P ) atoms and OH radicals have been determined over the temperature range 297°–438°K using flash photolysis–NO 2 chemiluminescence and flash photolysis–resonance fluorescence techniques, respectively. The Arrhenius expressions obtained are where the error limits in the Arrhenius activation energies are the estimated overall error limits. Rate data for the reactions of SiH 4 , CH 4 , and H 2 S with O( 3 P ), H, and F atoms and with OH, CH 3 , and CF 3 radicals are compared, showing that H 2 S and SiH 4 , which have similar bond energies, have reasonably similar reactivities toward these atoms and radicals.