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July 15, 1989Physical review. B, Condensed matter

Band-edge excitons in gallium arsenide on silicon

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AFA. FreundlichUniversity of HoustonHKH. KamadaDarmstadt University of Applied SciencesGNG. NeuCentre National de la Recherche Scientifique

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Freundlich et al. (1989) studied this question.

synapsesocial.com/papers/6a70657a6c240de38cdbca11https://doi.org/10.1103/physrevb.40.1652
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