The model of the interdigital capacitor (IDC) has been used for monitoring and analysing the dielectric properties of thin ferroelectric films. The dielectric properties of the film are correlated to its crystalline structure using a simple model of STO. The results of the analysis may be used for optimisation of growth and annealing processes of the films and reducing the effects of the electrode ferroelectric interface. The model can be used to optimise the design of IDCs in the sense of minimum losses and maximum controllability by selecting finger width and gapwidth of the IDC. Further improvement of the model suggests a comprehensive study of all possible mechanisms affecting the dielectric constant and the losses of STO films
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Gevorgian et al. (1996) studied this question.
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