Low-voltage driving and high-speed modulations of InGaAsP/InP electroabsorption modulators with strip-loaded planar waveguide have been described. The modulators were fabricated from VPE-grown InGaAsP/InP double-heterostructure wafers. For λ=1.55 μm incident light an extinction ratio of 20 dB was achieved with an applied voltage of ∼−6 V. The insertion loss was 9.6 dB. The calibrated 3 dB bandwidth was 1.6 GHz.
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Noda et al. (1985) studied this question.