Monolithic integration of an (Al)GaAs laser and an intracavity electroabsorption modulator using selective partial interdiffusion

The monolithic integration of an intracavity modulator with a multiple quantum well (Al)GaAs laser has been accomplished with the use of selective partial interdiffusion. Interdiffusion was used to create a blue-shifted and semitransparent modulator section in a ridge laser structure. In measuring the total optical output power from the devices, steady-state extinction ratios of 20 dB were measured at reverse biases of −4.6 and −3.6 V for modulator sections with lengths of 200 and 400 μm, respectively. Shifting of the lasing mode towards longer wavelengths (Δλ≊0–50 Å) was also observed making the structure useful as a tunable device and for frequency modulation applications.