We present a new large/small signal equivalent circuit for semiconductor lasers, valid for above‐ as well as below‐threshold operating conditions, based on the monomode rate equations and a polynomial approximation of Fermi integral. The model is thus valid for conditions of large injection. Results obtained by this model match perfectly those obtained by numerical integration of the rate equations. The equivalent circuit is easy to implement and solve on a nonlinear circuit analysis software such as SPICE and consequently allows the study of the parasitic effects as well as the laser behavior in complex circuits. Comparison between this model and previously published models is presented. The model is applied to the study of various heterojunction laser diodes, the experimental results of which have been published elsewhere.
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Elkadi et al. (1990) studied this question.
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