High-power and high-frequency operation of InGaAsP/InP lasers at 1.3 μm

A simultaneous operation of a semiconductor laser at high power and high speed was demonstrated in a buried crescent laser on p-InP substrate. In a cavity length of 300 μm, a maximum continuous wave (CW) power of 130 mW at room temperature was obtained in a junction-up mounting configuration. A 3dB bandwidth in excess of 12 GHz at an output power of 52 mW was observed.