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Analytical modeling demonstrates reduced spectral noise density in p-i-n-HEMT lightwave receivers, indicating superior noise performance under cooled operating conditions.
The spectral noise density of a lightwave receiver is computed from known physical parameters of the photodiode and the high-electron-mobility transistor (HEMT). Low noise is achieved for an appropriate choice of device parameters. The results are applied to circuits built with readily available commercial HEMTs and p-i-n photodiodes. They also predict the superior noise performance of cooled receivers which cannot be readily derived from previous work.>
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M.V. Schneider (1991) studied this question.
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