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We have found a degradation of the buried crescent (BC) InGaAsP/InP lasers that occurs when the p-n junction plane coincides with the surface exposed in the high-temperature H2 ambient before the melt contact during the liquid phase epitaxial growth. To eliminate the degradation, we have fabricated a new structure of the BC laser and have obtained stable cw operation at 80 °C.
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Hirano et al. (1983) studied this question.
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