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Room temperature pulsed operation of 0.67 µm wavelength GaInAsP/AlGaAs lasers on GaAs was achieved, where the lattice constant of GaInAsP active layer neraly matched those of the Al 0.6 Ga 0.4 As cladding layers. The threshold current density J th of the device was 8 kA/cm 2 .
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Kishino et al. (1984) studied this question.
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