Carrier injection across a tunnel homojunction is suggested as a new mechanism for a high-speed three-terminal device. The novel feature is the two-dimensional homojunction tunneling within a bipolar modulation doping structure. Negative differential resistance characterized by large peak-to-valley current ratios and high transconductance is anticipated. Estimates of the relevant time constants of the tunnel structure suggest the possibility of very high frequency operation.
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Leburton et al. (1988) studied this question.
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