Growth of GaP Crystals and p-n Junctions by a Traveling Solvent Method

A traveling solvent method has been used to grow GaP crystals from Ga solution. Growth rates of approximately 0.5 mm/h have been achieved at an average temperature as low as 850°C, from Ga zones 0.025 mm thick. Polycrystalline growth, 10 mm in diameter and 2 mm thick, has been achieved as a direct continuation of the crystal orientations in polycrystalline seeds. p-n junction structures have been grown by doping from a 2% Ge-Ga solvent zone. Some electrical characteristics of small diodes cut from polycrystalline crystals are described.