Electrically Addressable Multistate Volatile Memory with Flip‐Flop and Flip‐Flap‐Flop Logic Circuits on a Solid Support

Flip-flopping away: Multivalue random access memory can be achieved using electrically addressable Os2+-based multilayers. The controllable optical properties of the multilayers allow the construction of memory devices that are able to store up to five different states that depend on the given electrical inputs (see picture). The functions of the devices can be represented by sequential logic circuits that are equivalent to flip-flop and flip-flap-flop devices.