Threshold-voltage distribution of Pt/SrBi₂Ta₂O₉/Hf–Al–O/Si MFIS FETs

Statistical distribution of the threshold voltage V th for more than 90 Pt/SrBi 2 Ta 2 O 9 /Hf–Al–O/Si ferroelectric-gate field-effect transistors (FeFETs) is reported for both p- and n-channel devices. The average memory window is nearly 1.2 V at the sweep voltage amplitude of 5 V (between −4 V and 6 V for the p - channel, and ±5 V for the n - channel). The standard deviations of V th are about 7–8% and 3–5% of the memory window for the p- and n-channel FeFETs, respectively. The result indicates a promising level of demonstrating a small-scale circuit by using this technology.